Gunn Oscillators耿氏源

• High reliability and performance高可靠性高表现
• Narrow to broadband monotonic tuning窄带~宽带可调
• Combined mechanical and varactor tuning机械或变容调谐
• High RF output power高功率输出
• Integral heatsink附带散热器
• Micrometer tuning available微螺杆调谐

These Spacek Labs Gunn oscillators use high Q resonator circuits to produce clean and stable output signals. Either GaAs or InP Gunn diodes are used depending on the output power and frequency requirements. InP Gunn diodes are generally used in the high frequency high power oscillators. They offer lower AM noise along with higher efficiency. The bias input contains an integral low frequency suppression filter and over voltage protection circuit. These oscillators can be used as a laboratory source, a multiplier driver, local oscillator or whenever a reliable source for the generation of millimeter-wave signals is required.

SpacekLabs系列耿氏振荡器使用高Q谐振电路来产生干净稳定的输出信号。 根据输出功率和频率要求，使用GaAs或InP Gunn二极管。 InP Gunn二极管通常用于高频大功率振荡器。 它们提供更低的AM噪声以及更高的效率。 偏置输入包含一个积分低频抑制滤波器和过压保护电路。 这些振荡器可用作实验室源，倍频器驱动源，本地振荡器或每当需要用于生成毫米波信号的可靠源时。

 Spacek Labs | MM-Wave Technolog

• The varactor tuning voltage is from the Gunn bias voltage to -20 volts (ex. +10v to -20v), or from Gunn bias voltage to +30v (ex. +5v to +30v).
• When a temperature controller is used, the output power is reduced by approximately 1.5dB.
• The threshold current is approximately 1.3 times the operating current. InP Gunn diodes do not exhibit a threshold current.
• Storage temperature is -55oC to +125oC. The operating temperature for GaAs Gunn diodes is -55oC to +71oC. The operating temperature for InP Gunn diodes is -55oC to +60oC.